Competing misfit relaxation mechanisms in epitaxial correlated oxides
arXiv:1206.6680 · doi:10.1103/PhysRevLett.110.107206
Abstract
Strain engineering of functional properties in epitaxial thin films of strongly correlated oxides exhibiting octahedral-framework structures is hindered by the lack of adequate misfit relaxation models. Here we present unreported experimental evidences of a four-stage hierarchical development of octahedral-framework perturbations resulting from a progressive imbalance between electronic, elastic and octahedral tilting energies in La0.7Sr0.3MnO3 epitaxial thin films grown on SrTiO3 substrates. Electronic softening of the Mn - O bonds near the substrate leads to the formation of an interfacial layer clamped to the substrate with strongly degraded magnetotransport properties, i.e. the so-called dead layer, while rigid octahedral tilts become relevant at advanced growth stages without significant effects on charge transport and magnetic ordering.
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Cited by in corpus (13)
- Negative Poisson's Ratio in 1T-Type Crystalline Two-Dimensional Transition Metal Dichalcogenides
- Tuning Perpendicular Magnetic Anisotropy by Oxygen Octahedral Rotations in (LaSrMnO)/(SrIrO) Superlattices
- Thickness dependent properties in oxide heterostructures driven by structurally induced metal-oxygen hybridization variations
- Effect of symmetry mismatch on the domain structure of rhombohedral BiFeO3 thin films
- Moiré Engineering of Electronic Phenomena in Correlated Oxides
- The origin of the dead-layer at the La0.67Sr0.33MnO3/SrTiO3 interface and dead-layer reduction via interfacial engineering
- Thickness-dependent ferromagnetic metal to paramagnetic insulator transition in LaSrMnO thin films studied by x-ray magnetic circular dichroism
- Thermodynamic conditions during growth determine the magnetic anisotropy in epitaxial thin-films of LaSrMnO
- Spin-orbit effects surfacing on manganites
- Octahedral coupling in (111)- and (001)-oriented LaSrMnO/SrTiO heterostructures
- Unusual Electrical Conductivity Driven by Localized Stoichiometry Modification at Vertical Epitaxial Interfaces
- Charge ordering at the interface in (LaMnO)/(SrMnO) superlattices as the origin of their insulating state
- Termination control of magnetic coupling at a complex oxide interface