Tuning hole mobility in InP nanowires

Abstract

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.

4 pages, 4 figures

References in corpus (4)

• Mobility in Semiconducting Graphene Nanoribbons: Phonon, Impurity, and Edge Roughness Scattering
• Deformation Potentials and Electron-Phonon Coupling in Silicon Nanowires
• Observation of Space-Charge-Limited Transport in InAs Nanowires
• Comparison of inelastic and quasi-elastic scattering effects on nonlinear electron transport in quantum wires