Observation of Space-Charge-Limited Transport in InAs Nanowires

Abstract

Recent theory and experiment have suggested that space-charge-limited transport should be prevalent in high aspect-ratio semiconducting nanowires. We report on InAs nanowires exhibiting this mode of transport and utilize the underlying theory to determine the mobility and effective carrier concentration of individual nanowires, both of which are found to be diameter-dependent. Intentionally induced failure by Joule heating supports the notion of space-charge-limited transport and proposes reduced thermal conductivity due to the nanowires polymorphism.

References in corpus (3)

• Why does wurtzite form in nanowires of III-V zinc-blende semiconductors?
• Diameter-Dependent Electron Mobility of InAs Nanowires
• Unusually strong space-charge-limited current in thin wires

Cited by in corpus (6)

• Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
• Efficient terahertz emission from InAs nanowires
• Persistent enhancement of the carrier density in electron irradiated InAs nanowires
• Reduced Joule heating in nanowires
• Thermoelectric efficiency in the space-charge-limited transport regime in semiconductors
• Tuning hole mobility in InP nanowires