Electron spin relaxation in GaAs${}_{1-x}$Bi${}_x$: Effects of spin-orbit tuning by Bi incorporation

Abstract

The electron spin relaxation in $n$-type and intrinsic GaAs${}_{1-x}$Bi${}_x$ with Bi composition $0\le x\le 0.1$ is investigated from the microscopic kinetic spin Bloch equation approach. The incorporation of Bi is shown to markedly decrease the spin relaxation time as a consequence of the modification of the spin-orbit interaction. We demonstrate that the density and temperature dependences of spin relaxation time in GaAs${}_{1-x}$Bi${}_x$ resemble the ones in GaAs. Meanwhile, the Bir-Aronov-Pikus mechanism is found to be negligible compared to the D'yakonov-Perel' mechanism in intrinsic sample. Due to the absence of direct measurement of the electron effective mass in the whole compositional range under investigation, we further explore the effect of a possible variation of electron effective mass on the electron spin relaxation.

4 pages, 3 figures

References in corpus (4)

• Electron spin relaxation in bulk III-V semiconductors from a fully microscopic kinetic spin Bloch equation approach
• High temperature spin dephasing in n-typed GaAs quantum wells
• Spin relaxation in $n$-type GaAs quantum wells from a full microscopic approach
• Theory of excitons in cubic III-V semiconductor GaAs, InAs and GaN quantum dots: fine structure and spin relaxation