Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films

Abstract

The electron dephasing processes in two-dimensional homogeneous and inhomogeneous indium tin oxide thin films have been investigated in a wide temperature range 0.3--90 K. We found that the small-energy-transfer electron-electron ($e$-$e$) scattering process dominated the dephasing from a few K to several tens K. At higher temperatures, a crossover to the large-energy-transfer $e$-$e$ scattering process was observed. Below about 1--2 K, the dephasing time ${\tau }_{\phi }$ revealed a very weak temperature dependence, which intriguingly scaled approximately with the inverse of the electron diffusion constant $D$, i.e., ${\tau }_{\phi }(T\approx 0.3\mathrm{K})\propto 1/D$. Theoretical implications of our results are discussed. The reason why the electron-phonon relaxation rate is negligibly weak in this low-carrier-concentration material is presented.

10 pages, 7 figures

References in corpus (5)

• Universal dephasing rate due to diluted Kondo impurities
• Quantum decoherence of interacting electrons in arrays of quantum dots and diffusive conductors
• Inelastic Scattering from Local Vibrational Modes
• Long electron dephasing length and disorder-induced spin-orbit coupling in indium tin oxide nanowires
• Low-temperature electron dephasing time in AuPd revisited

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