VO2 nanosheets: controlling the THz properties through strain engineering

Abstract

We investigate far-infrared properties of strain engineered vanadium dioxide nanosheets through epitaxial growth on a (100)R TiO2 substrate. The nanosheets exhibit large uniaxial strain leading to highly uniform and oriented cracks along the rutile c-axis. Dramatic anisotropy arises for both the metal-insulator transition temperature, which is different from the structural transition temperature along the cR axis, and the metallic state conductivity. Detailed analysis reveals a Mott-Hubbard like behavior along the rutile cR axis.

Cited by in corpus (13)

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• Direct observation of the electrically triggered Insulator-Metal transition in V3O5 far below the transition temperature
• Massively strained VO2 thin film growth on RuO2
• Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO${}_2$ thin films
• Ultrafast insulator-to-metal transition in VO${}_2$ nanostructures assisted by picosecond strain pulses
• Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO${}_2$ thin films
• Manipulating the anisotropic phase separation in strained VO2 epitaxial films by nanoscale ion-implantation
• Small polarons mediated near-room-temperature metal-insulator transition in vanadium dioxide and their hopping dynamics
• Nonequilibrium spectral moment sum rules of the Holstein-Hubbard model