Effect of inhomogeneities and substrate on the dynamics of the metal-insulator transition in VO thin films
arXiv:1504.05954 · doi:10.1103/PhysRevB.92.115420
Abstract
We study the thermal relaxation dynamics of VO films after the ultrafast photo-induced metal-insulator transition for two VO film samples grown on AlO and TiO substrates. We find two orders of magnitude difference in the recovery time (a few ns for the VO/AlO sample vs. hundreds of ns for the VO/TiO sample). We present a theoretical model that accurately describes the MIT thermal properties and interpret the experimental measurements. We obtain quantitative results that show how the microstructure of the VO film and the thermal conductivity of the interface between the VO film and the substrate affect long time-scale recovery dynamics. We also obtain a simple analytic relationship between the recovery time-scale and some of the film parameters.
arXiv comment10 pages, 15 figures
References in corpus (9)
- Mott transition in VO2 revealed by infrared spectroscopy and nano-imaging
- Evidence for a Structurally-driven Insulator-to-metal Transition in VO2: a View from the Ultrafast Timescale
- Monoclinic and Correlated Metal Phase in VO_2 as Evidence of the Mott Transition: Coherent Phonon Analysis
- Band-selective Measurement of Electronic Dynamics in VO2 using Femtosecond Near Edge X-ray Absorption
- Ultrafast Insulator-Metal Phase Transition in VO2 Studied by Multiterahertz Spectroscopy
- Effective medium theory for disordered two-dimensional graphene
- Structural and Electronic Recovery Pathways of a Photoexcited Ultrathin VO2 Film
- VO2 nanosheets: controlling the THz properties through strain engineering
- Substrate-induced microstructure effects on the dynamics of the photo-induced Metal-insulator transition in VO thin films