Experimental Phonon Band Structure of Graphene using C${}^{12}andC$^{13}$ Isotopes

Abstract

Using very uniform large scale chemical vapor deposition grown graphene transferred onto silicon, we were able to identify 15 distinct Raman lines associated with graphene monolayers. This was possible thanks to a combination of different carbon isotopes and different Raman laser energies and extensive averaging without increasing the laser power. This allowed us to obtain a detailed experimental phonon dispersion relation for many points in the Brillouin zone. We further identified a D+D' peak corresponding to a double phonon process involving both an inter- and intra-valley phonon.

5 pages, 4 figures, 1 table

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Cited by in corpus (11)

• Absence of hyperfine effects in ${}^{13}$C-graphene spin valve devices
• Spectroscopic investigations of phonons in epitaxial graphene
• Real Space Raman Spectroscopy of Graphene Isotope Superlattices
• Reconstruction of the phonon relaxation times using solutions of the Boltzmann transport equation
• Isotopic effects in structural properties of graphene
• Nuclear-induced dephasing and signatures of hyperfine effects in isotopically purified ${}^{13}$C graphene
• From 2D to 3D: graphene moulding for transparent and flexible probes
• Isotopic effects in chair graphane
• Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped $\mathrm{GaAs}$/$\mathrm{A}{\mathrm{l}}_{\mathrm{x}}\mathrm{G}{\mathrm{a}}_{1-\mathrm{x}}\mathrm{As}$ heterostructures
• Theory of Graphene Raman Spectroscopy
• Weak Localisation in Clean and Highly Disordered Graphene