Doping Dependence of Gap Inhomogeneities at BiSrCaCuO Surfaces
arXiv:1110.4976 · doi:10.1088/1367-2630/14/3/033004
Abstract
We study the inhomogeneity of the electronic pairing gap observed by STM near the surface of BiSrCaCuO to be correlated with interstitial O defects. We treat the problem in a slave boson mean field theory of a disordered model, and identify three aspects of the O defects related to the inhomogeneity: (1)the superexchange interaction is locally enhanced in their vicinity, which enhances the local pairing gap and reduces the coherence peak; (2)they donate holes into CuO plane, which reduces the spinon density of states of and hence the average gap at large doping; (3)holes are locally attracted to the vicinity of oxygen defects, which causes impurity bound state and further reduces the coherence peak. The interplay of these mechanisms explains simultaneously the locally enhanced pairing gap around oxygen defects, and the reduction of average gap as increasing oxygen concentration.
17 pages, 5 figures
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- Local modulations of the spin-fluctuation mediated pairing interaction by impurities in d-wave superconductors
- Strong correlations generically protect d-wave superconductivity against disorder
- Doping Dependence of Gap Inhomogeneities at BiSrCaCuO Surfaces
- Integration of Scanning Probe Microscope with High-Performance Computing: fixed-policy and reward-driven workflows implementation
- Quantitative characterization of the nanoscale local lattice strain induced by Sr dopants in LaSrCuO