Bulk and Surface Nanoscale Hole Density Inhomogeneity in HgBaCuO and BiSrCaCuO Cuprates
arXiv:1010.5312 · doi:10.1103/PhysRevB.83.064514
Abstract
It is well established that the hole density in the prototypical superconductor LaSrCuO is very inhomogeneous due to Sr-dopant induced disorder. On the other hand, until recently it is widely believed that the hole distribution in HgBaCuO and BiSrCaCuO doped by interstitial oxygen is much more uniform. Recent nuclear magnetic resonance measurements indicate, however, that the charge inhomogeneity in HgBaCuO is close to that in LaSrCuO. Calculations performed in the present paper confirm this observation. We also show that the charge inhomogeneity is most pronounced at the surface layer that can be probed by scanning tunneling microscope. Our simulations demonstrate that, despite having similar amplitudes of charge inhomogeneity, the hole mean free path in HgBaCuO is substantially longer than that in LaSrCuO. The screening of Coulomb repulsion in HgBaCuO is also stronger. These two reasons might explain the difference in superconducting critical temperatures between these two compounds.
to appear in PRB, extended discussion of hole mean free path
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