Local-field effects in silicon nanoclusters
arXiv:1109.0173 · doi:10.1103/PhysRevB.84.075342
Abstract
The effect of the local fields on the absorption spectra of silicon nanoclusters (NCs), freestanding or embedded in SiO2, is investigated in the DFT-RPA framework for different size and amorphization of the samples. We show that local field effects have a great influence on the optical absorption of the NCs. Their effect can be described by two separate contributions, both arising from polarization effects at the NC interface. First, local fields produce a reduction of the absorption that is stronger in the low energy limit. This contribution is a direct consequence of the screening induced by polarization effects on the incoming field. Secondly, local fields cause a blue shift on the main absorption peak that has been explained in terms of perturbation of the absorption resonance conditions. Both contributions do not depend either on the NC diameter nor on its amorphization degree, while showing a high sensitivity to the environment enclosing the NCs.
References in corpus (8)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Interband, intraband and excited-state direct photon absorption of silicon and germanium nanocrystals embedded in a wide band-gap lattice
- Single-particle states in spherical Si/SiO quantum dots
- Size, oxidation, and strain in small Si/SiO2 nanocrystals
- Silicon Nanocrystallites in SiO2 Matrix: The Role of Disorder and Size
- High Luminescence in Small Si/SiO2 Nanocrystals: A Theoretical Study
- Role of local fields in the optical properties of silicon nanocrystals using the tight binding approach
- Local-fields and disorder effects in free-standing and embedded Si nanocrystallites