277 citations · 987 across the 19 of their papers we have counts for
19 papers
Interplay of quantum confinement and strain effects in type I to type II transition in Ge/Si core-shell nanocrystals
Ivan Marri, Stefano Ossicini, Michele Amato +2
The electronic properties of hydrogenated, spherical, Si/Ge and Ge/Si core-shell nanocrystals with a diameter ranging from 1.8 to 4.0 nm are studied within Density Functional Theor…
Tuning the Work Function of Si(100) Surface by Halogen Absorption: A DFT Study
Matteo Bertocchi, Michele Amato, Ivan Marri +1
First-principles calculations of work function tuning induced by different chemical terminations on Si(100) surface are presented and discussed. We find that the presence of haloge…
Carrier Multiplication in Silicon Nanocrystals: Theoretical Methodologies and Role of the Passivation
Ivan Marri, Marco Govoni, Stefano Ossicini
Carrier multiplication is a non-radiative recombination mechanism that leads to the generation of two or more electron-hole pairs after absorption of a single photon. By reducing t…
First-Principle Investigations of Carrier Multiplication in Si Nanocrystals: a Short Review
Ivan Marri, Stefano Ossicini
Carrier Multiplication (CM) is a Coulomb-driven non-radiative recombination mechanism which leads to the generation of multiple electron-hole pairs after absorption of a single hig…
Doped and Codoped Silicon Nanocrystals: the Role of Surfaces and Interfaces
Ivan Marri, Elena Degoli, Stefano Ossicini
Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and bio…
Energetics and carrier transport in doped Si/SiO2 quantum dots
Nuria Garcia-Castello, Sergio Illera, Joan Daniel Prades +3
In the present theoretical work we have considered impurities, either boron or phosphorous, located at different substitutional sites in silicon quantum dots (Si-QDs) with diameter…