Strain driven migration of In during the growth of InAs/GaAs quantum posts
arXiv:1108.1768 · doi:10.1063/1.4818358
Abstract
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that such anomalous behaviour can be related to the strain-driven detachment of In atoms from the crystal and their surface diffusion towards the self-assembled nanostructures.
10 pages, 4 figures. Published in APL Materials