16 citations · 34 across the 6 of their papers we have counts for
6 papers
Structural and optical changes induced by incorporation of antimony into InAs/GaAs(001) quantum dots
A. G. Taboada, A. M. Sánchez, A. M. Beltrán +12
We present experimental evidence of Sb incorporation inside InAs/GaA(001) quantum dots exposed to an antimony flux immediately before capping with GaAs. The Sb composition profile…
Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence
K. -H. Lee, K. W. J. Barnham, John S. Roberts +4
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAs…
Analysis of the 3D distribution of self-assembled stacked quantum dots by electron tomography
Jesús Hernández-Saz, Miriam Herrera, Diego Alonso-Álvarez +1
This paper has been withdrawn by the authors. The 3D distribution of self-assembled stacked quantum dots (QDs) is a key parameter to obtain the highest performance in a variety of…
Strain driven migration of In during the growth of InAs/GaAs quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +6
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum…
Strain balanced quantum posts
D. Alonso-Álvarez, B. Alén, J. M. Ripalda +8
Quantum posts are assembled by epitaxial growth of closely spaced quantum dot layers, modulating the composition of a semiconductor alloy, typically InGaAs. In contrast with most s…
In-situ accumulated stress measurements: application to strain balanced quantum dots and quantum posts
D. Alonso-Álvarez., B. Alén, J. M. Ripalda +6
In this work we use the in-situ accumulated stress monitoring technique to evaluate the evolution of the stress during the strain balancing of InAs/GaAs quantum dots and quantum po…