Minimization of the Switching Time of a Synthetic Free Layer in Thermally Assisted Spin Torque Switching

Abstract

We theoretically studied the thermally assisted spin torque switching of a synthetic free layer and showed that the switching time is minimized if the condition H_J=|H_s|/(2 alpha) is satisfied, where H_J, H_s and alpha are the coupling field of two ferromagnetic layers, the amplitude of the spin torque, and the Gilbert damping constant. We also showed that the coupling field of the synthetic free layer can be determined from the resonance frequencies of the spin-torque diode effect.

3 pages, 3 figures

References in corpus (2)

• Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers
• Thermally assisted spin transfer torque switching in synthetic free layers

Cited by in corpus (5)

• Thermal switching rate of a ferromagnetic material with uniaxial anisotropy
• Field-Free Synthetic-Ferromagnet Spin Torque Oscillator
• Dependence of spin torque diode voltage on applied field direction
• Maximizing Spin Torque Diode Voltage by Optimizing Magnetization Alignment
• Theory of Spin Torque Assisted Thermal Switching of Single Free Layer