Epitaxial growth of FeSe${}_{0.5}$Te${}_{0.5}$ thin films on CaF${}_2$ substrates with high critical current density

Abstract

In-situ epitaxial growth of FeSe${}_{0.5}$Te${}_{0.5}$ thin films is demonstrated on a non-oxide substrate CaF${}_2$. Structural analysis reveals that compressive stress is moderately added to 36-nm thick FeSe${}_{0.5}$Te${}_{0.5}$, which pushes up the critical temperature above 15 K, showing higher values than that of bulk crystals. Critical current density at $T$ = 4.5 K reaches 5.9 x 10${}^4$ Acm${}^{-2}$ at ${\mu }_{0}H$ = 10 T, and 4.2 x 10${}^4$ Acm${}^{-2}$ at ${\mu }_{0}H$ = 14 T. These results indicate that fluoride substrates have high potential for the growth of iron-based superconductors in comparison with popular oxide substrates.

9 pages, 3 figures, to be published in Applied Physics Express 4, 053101 (2011)

References in corpus (9)

• Superconductivity at 36 K in beta-Fe1.01Se with the compression of the interlayer separation under pressure
• Strong Tc dependence for strained, epitaxial Ba(Fe1-xCox)2As2 thin films
• Superconductivity in Epitaxial Thin Films of Co-Doped SrFe2As2 with Bilayered FeAs Structures and their Magnetic Anisotropy
• Systematic Comparison of Eight Substrates in the Growth of FeSe${}_{0.5}$Te${}_{0.5}$ Superconducting Thin Films
• Heteroepitaxial growth and optoelectronic properties of layered iron oxyarsenide, LaFeAsO
• Preparation and superconductivity of iron selenide thin films
• Epitaxial growth and anisotropy of La(O,F)FeAs thin films deposited by Pulsed Laser Deposition
• Epitaxial Growth of NdFeAsO Thin Films by Molecular Beam Epitaxy
• Influenced of Fe buffer thickness on the crystalline quality and the transport properties of Fe/Ba(Fe1-xCox)2As2 bilayers