Graphene valley filter using a line defect

Abstract

With its two degenerate valleys at the Fermi level, the band structure of graphene provides the opportunity to develop unconventional electronic applications. Herein, we show that electron and hole quasiparticles in graphene can be filtered according to which valley they occupy without the need to introduce confinement. The proposed valley filter is based on scattering off a recently observed line defect in graphene. Quantum transport calculations show that the line defect is semitransparent and that quasiparticles arriving at the line defect with a high angle of incidence are transmitted with a valley polarization near 100%.

5 pages, 4 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• Ultrahigh electron mobility in suspended graphene
• Valley filter and valley valve in graphene
• Electronic transport in polycrystalline graphene
• Topological Defects in Graphene: Dislocations and Grain Boundaries
• Cones, pringles, and grain boundary landscapes in graphene topology

Cited by in corpus (13)

• Valley polarization in MoS2 monolayers by optical pumping
• Coupling the valley degree of freedom to antiferromagnetic order
• Intrinsic spin Hall effect in monolayers of group-VI dichalcogenides: A first-principles study
• Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride
• Revealing the grain structure of graphene grown by chemical vapor deposition
• Resonant valley filtering of massive Dirac electrons
• One-dimensional quantum channel in a graphene line defect
• Flat Bands near Fermi Level of Topological Line Defects on Graphite
• Enhanced Intervalley Scattering of Twisted Bilayer Graphene by Periodic AB Stacked Atoms
• Scattering by linear defects in graphene: a continuum approach
• Valley and spin polarization from graphene line defect scattering
• Scattering of a Dirac electron on a mass barrier
• Conductance enhancement due to atomic potential fluctuations in graphene