Tunable graphene bandgaps from superstrate mediated interactions
arXiv:1103.3943 · doi:10.1103/PhysRevB.84.155438
Abstract
A theory is presented for the strong enhancement of graphene-on-substrate bandgaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1eV can be formed for experimentally achievable values of electron-phonon coupling and phonon frequency. Gap enhancements range between 1 and 4, indicating possible benefits to graphene electronics through greater bandgap control for digital applications, lasers, LEDs and photovoltaics through the relatively simple application of polarizable materials such as SiO2 and Si3N4.
4 pages, 4 figures, to appear in Phys. Rev. B
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Cited by in corpus (6)
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- Hairy BTZ black hole and its analogue model in graphene
- Polarons in highly doped atomically thin graphitic materials
- Enhancement of gaps in thin graphitic films for heterostructure formation
- Electronic properties of the Dirac and Weyl systems with first- and higher-order dispersion in non-Fermi-liquid picture
- Gap modification of atomically thin boron nitride by phonon mediated interactions