Electric--field effect on electron-doped infinite-layer SrLaCuO thin films
arXiv:1103.1548 · doi:10.1103/PhysRevB.84.092502
Abstract
We have used the electric--field effect to modulate the resistivity of the surface of underdoped SrLaCuO thin films, allowing opposite modifications of the electron and hole density in the CuO planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.
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