Influence of oxygen reduction on the structural and electronic properties of electron-doped Sr1-xLaxCuO2 thin films
arXiv:0811.3167 · doi:10.1016/j.physc.2008.11.006
Abstract
Single phase, c-axis oriented, e-doped, Sr1-xLaxCuO2 thin films were epitaxially grown on KTaO3 and DyScO3 substrates by reactive rf sputtering. As-grown films being insulating due to oxygen excess, oxygen reduction is necessary to observe superconductivity. Two different procedures were employed to reach superconductivity. On one hand an in-situ reduction process was conducted on a series of films deposited on both types of substrates. On the other hand, an ex-situ reduction procedure was performed sequentially on a single film deposited on DyScO3. The study of the influence of oxygen reduction on the structural and electronic properties of the thin films is presented and discussed.
27 pages, 10 figures, to appear in Physica C
References in corpus (1)
Cited by in corpus (7)
- Progress and perspectives on the electron-doped cuprates
- Anisotropy of the in-plane angular magnetoresistance of electron-doed Sr1-xLaxCuO2 thin films
- Properties of the electron-doped infinite-layer superconductor SrLaCuO epitaxially grown by pulsed laser deposition
- High magnetic field evolution of the in-plane angular magnetoresistance of electron-doped Sr1-xLaxCuO2 in the normal state
- Penetration depth of electron-doped-infinite-layer SrLaCuO thin films
- Electric--field effect on electron-doped infinite-layer SrLaCuO thin films
- Zero-bias anomalies on SrLaCuO thin films