Relativistic Brownian motion on a graphene chip
arXiv:1103.0945 · doi:10.1140/epjb/e2012-30716-7
Abstract
Relativistic Brownian motion can be inexpensively demonstrated on a graphene chip. The interplay of stochastic and relativistic dynamics, governing the transport of charge carrier in graphene, induces noise-controlled effects such as (i) a stochastic effective mass, detectable as a suppression of the particle mobility with increasing the temperature; (ii) a transverse ratchet effect, measurable as a net current orthogonal to an ac drive on an asymmetric substrate, and (iii) a chaotic stochastic resonance. Such properties can be of practical applications in the emerging graphene technology.
4 pages, 3 figures
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Cited by in corpus (13)
- Introduction to Graphene Electronics -- A New Era of Digital Transistors and Devices
- Current-Voltage Characteristics of Weyl Semimetal Semiconducting Devices, Veselago Lenses and Hyperbolic Dirac Phase
- Tunneling of Massive Dirac Fermions in Graphene through Time-periodic Potential
- Stochastic thermodynamics of relativistic Brownian motion
- Dirac fermion time-Floquet crystal: manipulating Dirac points
- Ratchet effect in graphene with trigonal clusters
- Emergence and dynamical properties of stochastic branching in the electronic flows of disordered Dirac solids
- Harmonic mixing in two coupled qubits: quantum synchronization via ac drives
- Brownian dynamics of Dirac fermions in twisted bilayer graphene
- Heat Distribution of Relativistic Brownian Motion
- Thermal dissipation in two dimensional relativistic Fermi gases with a relaxation time model
- Quantum Otto engines at relativistic energies
- Relativistic Langevin Equation derived from a particle-bath Lagrangian