High Quality, Transferable Graphene Grown on Single Crystal Cu(111) Thin Films on Basal-Plane Sapphire

Abstract

The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly by growing it on single-crystal Cu surfaces. Here we show that high quality, large-area graphene can be grown on epitaxial single-crystal Cu(111) thin films on reusable basal-plane sapphire (alpha-Al2O3(0001)) substrates and then transferred to another substrate. While enabling graphene growth on Cu single-crystal surfaces, this method has the potential to avoid the high cost and extensive damage to graphene associated with sacrificing bulk single-crystal Cu during graphene transfer.

10 pages, 3 figures

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Cited by in corpus (11)

• Growth of Epitaxial Graphene: Theory and Experiment
• Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire
• Epitaxial (111) Films of Cu, Ni, and Cu${}_{x}Ni$_y$on\alpha -Al$_2$O$_3$(0001) for Graphene Growth by Chemical Vapor Deposition
• Oxidation-assisted graphene heteroepitaxy on copper foil
• The influence of residual oxidizing impurities on the synthesis of graphene by atmospheric pressure chemical vapor deposition
• Argon Assisted Growth of Epitaxial Graphene on Cu(111)
• Influence of Chemisorbed Oxygen on the Growth of Graphene on Cu(100) by Chemical Vapor Deposition
• Putting high-index Cu on the map for high-yield, dry-transferred CVD graphene
• Spectroscopic investigations of phonons in epitaxial graphene
• Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica
• Giant Secondary Grain Growth in Cu Films on Sapphire