Raman Spectroscopy Study of Annealing-Induced Effects on Graphene Prepared by Micromechanical Exfoliation
arXiv:1011.3112 · doi:10.5012/bkcs.2010.31.9.2679
Abstract
In this note, we report a Raman spectroscopy study of annealing-induced effects on graphene samples prepared by the microexfoliation method. It was shown that randomly located adhesive residues often contaminate nearby graphene sheets during thermal annealing. The contamination on graphene can be as thin as ~1 nm, but gives several new Raman bands of unusually strong intensity. We also find that their intensity is strongly dependent on the excitation wavelength implying that graphene-induced Raman enhancement may be operative. The current study also suggests that graphene can be selectively sensitive towards certain molecular species in binding, which can be exploited for interesting application.
8 pages, 4 figures
References in corpus (7)
- Electric Field Effect in Atomically Thin Carbon Films
- Detection of Individual Gas Molecules Absorbed on Graphene
- Atomic Structure of Graphene on SiO2
- Ripple Texturing of Suspended Graphene Atomic Membranes
- High-Resolution Scanning Tunneling Microscopy Imaging of Mesoscopic Graphene Sheets on an Insulating Surface
- Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers
- Colors Of Graphite On Silicon Dioxide