Adiabatic quantum pumping, magnification effects and quantum size effects of spin-torque in magnetic tunnel junctions
arXiv:1010.0381 · doi:10.1103/PhysRevB.82.064413
Abstract
We study the adiabatic quantum pumping and quantum size effects of spin-torque in a magnetic tunnel junction within a scattering matrix approach. Quantum size effects are predicted in the presence of a dc bias as a function of the thickness of the normal metal layer inserted between two magnetic layers and of the fixed magnetic layer. In the presence of ac voltages, the results for the spin-torque show a peculiar magnification effect and advantages of spin-torque pumping in actual devices are also discussed.
References in corpus (11)
- Bias-driven large power microwave emission from MgO-based tunnel magnetoresistance devices
- Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
- Magnetoresistance and spin-transfer torque in magnetic tunnel junctions
- Ab initio studies of the spin-transfer torque in tunnel junctions
- Spin-transfer torque in magnetic tunnel junctions: Scattering theory
- Current Induced Order Parameter Dynamics: Microscopic Theory Applied to Co/Cu/Co spin valves
- Implementation of a non-equilibrium Green's function method to calculate spin transfer torque
- Description of current-driven torques in magnetic tunnel junctions
- Bias dependence of magnetic exchange interactions: application to interlayer exchange coupling in spin valves
- Landauer theory of ballistic torkances in non-collinear spin valves
- Spin-torque generation by dc or ac voltages in magnetic layered structures