Spin-torque generation by dc or ac voltages in magnetic layered structures
arXiv:0909.0374 · doi:10.1103/PhysRevB.81.045307
Abstract
A general expression of the current induced spin torque in a magnetic layered structure in the presence of external dc or ac voltages is derived in the framework of the scattering matrix approach. A detailed analysis is performed for a magnetic-nonmagnetic-magnetic trilayer connected to external leads in the presence of dc voltage bias in the ballistic regime. Alternatively, the possibility of producing spin torque by means of the adiabatic ac modulation of external gate voltages (quantum pumping) is proposed and discussed.
References in corpus (7)
- Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
- Ab initio studies of the spin-transfer torque in tunnel junctions
- Spin-transfer torque in magnetic tunnel junctions: Scattering theory
- Current Induced Order Parameter Dynamics: Microscopic Theory Applied to Co/Cu/Co spin valves
- Implementation of a non-equilibrium Green's function method to calculate spin transfer torque
- Bias dependence of magnetic exchange interactions: application to interlayer exchange coupling in spin valves
- Landauer theory of ballistic torkances in non-collinear spin valves
Cited by in corpus (5)
- Scattering theory of magnetic/superconducting junctions with spin active interfaces
- Spin transfer torque enhancement in dual spin valve in the ballistic regime
- Gate-dependent spin-torque in a nanoconductor-based spin-valve
- Adiabatic quantum pumping, magnification effects and quantum size effects of spin-torque in magnetic tunnel junctions
- Boltzmann theory of the inverse Edelstein effect in a two-dimensional Rashba gas