Phonon switching and combined Fano-Rice effect in optical spectra of bilayer graphene

Abstract

Recent infrared measurements of phonon peaks in gated bilayer graphene reveal two striking signatures of electron-phonon interaction: an asymmetric Fano lineshape and a giant variation of the peak intensity as a function of the applied gate voltage. In this Letter we provide a unified theoretical framework which accounts for both these effects and unveils the occurrence of a switching mechanism between the symmetric ($E_g$) and anti-symmetric ($E_u$) phonon mode as dominant channel in the optical response. A complete phase diagram of the optical phonon response is also presented, as a function of both the charge density and the bandgap.

final version

References in corpus (10)

• The Raman Fingerprint of Graphene
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Electric Field Effect Tuning of Electron-Phonon Coupling in Graphene
• Raman imaging of doping domains in graphene on SiO2
• Infrared spectroscopy of electronic bands in bilayer graphene
• Optical conductivity of bilayer graphene with and without an asymmetry gap
• Observation of Anomalous Phonon Softening in Bilayer Graphene
• Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene

Cited by in corpus (2)

• Charged-phonon theory and Fano effect in the optical spectroscopy of bilayer graphene
• Hopping-resolved electron-phonon coupling in bilayer graphene