Electric g Tensor Control and Spin Echo of a Hole-Spin Qubit in a Quantum Dot Molecule
arXiv:1003.0897 · doi:10.1088/1367-2630/12/9/093012
Abstract
The feasibility of high-fidelity single-qubit operations of a hole spin in a quantum dot molecule by electric g tensor control is demonstrated. Apart from a constant external magnetic field the proposed scheme allows for an exclusively electric control of the hole spin. Realistic electric gate bias profiles are identified for various qubit operations using process-tomography-based optimal control. They are shown to be remarkably robust against decoherence and dissipation arising from the interaction of the hole with host-lattice nuclear spins and phonons, with a fidelity loss of 1 percent for gate operation times of ns. Spin-echo experiments for the hole spin are modeled to explore dephasing mechanisms and the role of pulse-timing imperfections on the gate fidelity loss is discussed.
11 pages, 6 figures, revtex4
References in corpus (11)
- Spin decoherence of a heavy hole coupled to nuclear spins in a quantum dot
- Spin relaxation and decoherence of holes in quantum dots
- Quantum Process Tomography of a Universal Entangling Gate Implemented with Josephson Phase Qubits
- Observation of extremely slow hole spin relaxation in self-assembled quantum dots
- Singlet-triplet decoherence due to nuclear spins in a double quantum dot
- Hole spin dephasing time associated to hyperfine interaction in quantum dots
- Electrically tunable g-factors in quantum dot molecular spin states
- Hole spin relaxation in semiconductor quantum dots
- Environment-invariant measure of distance between evolutions of an open quantum system
- Method for Full Bloch-Sphere Control of a Localized Spin via a Single Electrical Gate
- Time-optimal performance of Josephson charge qubits: A process tomography approach
Cited by in corpus (11)
- Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
- Scalable qubit architecture based on holes in quantum dot molecules
- Spin Orbit Mediated Manipulation of Heavy Hole Spin Qubit in Gated Semiconductor Nanodevices
- Electric-field Manipulation of the Lande' g Tensor of Holes in In0.5Ga0.5As/GaAs Self-assembled Quantum Dots
- Spin-orbit-induced circulating currents in a semiconductor nanostructure
- Spin-orbit induced hole spin relaxation in InAs and GaAs quantum dots
- All electrically controlled quantum gates for single heavy hole spin qubits
- Geometric and compositional influences on spin-orbit induced circulating currents in nanostructures
- Asymmetric tensor in low-symmetry two-dimensional hole systems
- Electrical control of ferromagnetism in Mn-doped semiconductor heterostructures
- Cloaking the magnons