Electronic structure and Jahn-Teller effect in GaN:Mn and ZnS:Cr
arXiv:1003.0365 · doi:10.1088/0953-8984/23/2/025503
Abstract
We present an ab-initio and analytical study of the Jahn-Teller effect in two diluted magnetic semiconductors (DMS) with d4 impurities, namely Mn-doped GaN and Cr-doped ZnS. We show that only the combined treatment of Jahn-Teller distortion and strong electron correlation in the 3d shell may lead to the correct insulating electronic structure. Using the LSDA+U approach we obtain the Jahn-Teller energy gain in reasonable agreement with the available experimental data. The ab-initio results are completed by a more phenomenological ligand field theory.
arXiv comment15 pages, 5 figures
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- Exchange coupling and Mn valency in GaN doped with Mn and co-doped with Mg
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