Silicon Photo-Multiplier radiation hardness tests with a beam controlled neutron source

Abstract

We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Multipliers, semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated integrating up to 7x10^10 1-MeV-equivalent neutrons per cm^2. Detector performances have been recorded during the neutron irradiation and a gradual deterioration of their properties was found to happen already after an integrated fluence of the order of 10^8 1-MeV-equivalent neutrons per cm^2.

7 pages, 6 figures, Submitted to Nucl. Inst. Meth. A

References in corpus (1)

• Radiation Damage Studies of Silicon Photomultipliers

Cited by in corpus (6)

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• Characterization of SiPM Performance in a Small Satellite in Low Earth Orbit using LabOSat-01