Gate-controlled one-dimensional channel on the topological surface

Abstract

We investigate the formation of the one-dimensional channels on the topological surface under the gate electrode. The energy dispersion of these channels is almost linear in the momentum with the velocity sensitively depending on the strength of the gate voltage. The energy is also restricted to be positive or negative depending on the strength of the gate voltage. Consequently, the local density of states near the gated region has an asymmetric structure with respect to zero energy. In the presence of the electron-electron interaction, the correlation effect can be tuned by the gate voltage. We also suggest a tunneling experiment to verify the presence of these bound states.

5 pages, 4 figures

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• Dynamics of domain-wall Dirac fermions on a topological insulator: a chiral fermion beam splitter
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• Quantum Berezinskii-Kosterltz-Thouless Transition for Topological Insulator
• Gate field effects on the topological insulator BiSbTeSe2 interface
• Bound states and controllable currents on Topological Insulator surfaces with extended magnetic defects
• Experimental Observation of Bound States of 2D Dirac Electrons at Surface Steps of the Topological Insulator Bi${}_2$Se${}_3$
• Unconventional band structure for a periodically gated surface of a three dimensional Topological Insulator
• Gate-Tunable Resonances and 1D Channel in a Graphene Nanoslide