High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

Abstract

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an order of magnitude upon mild annealing at 200 0C in Ar/H2 environment for 1 hour. With the application of a backgate voltage, all of the devices showed FET behavior with maximum hole and electron mobilities of 4.0 and 1.5 cm2/Vs respectively. This study shows promise for scaled up fabrication of graphene based nanoelectronic devices.

arXiv comment8 pages, 6 figures

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Cited by in corpus (9)

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• Space charge limited conduction with exponential trap distribution in reduced graphene oxide sheets
• Physical properties and device applications of graphene oxide
• Coulomb Blockade and Hopping Conduction in Graphene Quantum Dots Array
• Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration
• Semiconducting enriched carbon nanotube align arrays of tunable density and their electrical transport properties
• Ultra-high density alignment of carbon nanotubes array by dielectrophoresis
• Recent progress in parallel fabrication of individual single walled carbon nanotube devices