Observation of excited states in a graphene double quantum dot

Abstract

We study a graphene double quantum dot in different coupling regimes. Despite the strong capacitive coupling between the dots, the tunnel coupling is below the experimental resolution. We observe additional structures inside the finite-bias triangles, part of which can be attributed to electronic excited dot states, while others are probably due to modulations of the transmission of the tunnel barriers connecting the system to source and drain leads.

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Cited by in corpus (20)

• A Graphene Quantum Dot with a Single Electron Transistor as Integrated Charge Sensor
• Gate-defined electron-hole double dots in bilayer graphene
• Single-electron double quantum dots in bilayer graphene
• Time-resolved charge detection in graphene quantum dots
• Coherent Electron-Phonon Coupling in Tailored Quantum Systems
• Electronic Excited States in Bilayer Graphene Double Quantum Dots
• Tilted potential induced coupling of localized states in a graphene nanoconstriction
• Single-electron Transport in Graphene-like Nanostructures
• Quantum dot behavior in transition metal dichalcogenides nanostructures
• Molecule States in a Gate Tunable Graphene Double Quantum Dot
• Electronic triple-dot transport through a bilayer graphene island with ultrasmall constrictions
• Ultra long spin decoherence times in graphene quantum dots with a small number of nuclear spins
• Spin decoherence in graphene quantum dots due to hyperfine interaction
• Transport in a three-terminal graphene quantum dot in the multi-level regime
• Nonequilibrium Kondo effect in a graphene-coupled quantum dot in the presence of a magnetic field
• Finite bias spectroscopy of a three-terminal graphene quantum dot in the multi-level regime
• Electric control of tunneling energy in graphene double dots
• Magnetic field induced charge redistribution in disordered graphene double quantum dots
• Lithium doped graphene as spintronic devices
• Tuning inter-dot tunnel coupling of an etched graphene double quantum dot by adjacent metal gates