Scaling analysis of the static and dynamic critical exponents in under, over, and optimally-doped Pr$_{2-x}$Ce$_x$CuO$_{4-y}$ films

M. C. Sullivan; R. A. Isaacs; M. F. Salvaggio; J. Sousa; C. G. Stathis; J. B. Olson

doi:10.1103/PhysRevB.81.134502

paper

Scaling analysis of the static and dynamic critical exponents in under, over, and optimally-doped Pr $_{2 - x}$ Ce $_{x}$ CuO $_{4 - y}$ films

arXiv:0908.3498 · doi:10.1103/PhysRevB.81.134502

Abstract

We report on current-voltage measurements of the zero-field normal-superconducting phase transition in thin films of Pr $_{2 - x}$ Ce $_{x}$ CuO $_{4 - y}$ as a function of doping. We find that the small size of the critical regime in these materials ( $\approx 25$ mK) gives rise to mean-field behavior at the phase transition with a static exponent of $ν \approx 0.5$ for all dopings (in contrast to hole-doped $YB a_{2} C u_{3} O_{7 - δ}$ ). We also find mean-field behavior in the dynamic exponent $z$ . This indicates that Pr $_{2 - x}$ Ce $_{x}$ CuO $_{4 - y}$ behaves similarly to conventional superconductors in contrast to other cuprate superconductors. However, as the transition width in our samples decreases, the dynamic critical exponent approaches $z = 1.5$ , similar to the critical exponent found in hole-doped $YB a_{2} C u_{3} O_{7 - δ}$ .

6 pages 4 figures

Scaling analysis of the static and dynamic critical exponents in under, over, and optimally-doped Pr2−x​Cex​CuO4−y​ films

Abstract

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Scaling analysis of the static and dynamic critical exponents in under, over, and optimally-doped Pr $_{2 - x}$ Ce $_{x}$ CuO $_{4 - y}$ films