Tunneling anisotropic magnetoresistance in organic spin valves

Abstract

We report the observation of tunneling anisotropic magnetoresistance (TAMR) in an organic spin-valve-like structure with only one ferromagnetic electrode. The device is based on a new high mobility perylene diimide-based n-type organic semiconductor. The effect originates from the tunneling injection from the LSMO contact and can thus occur even for organic layers which are too thick to support the assumption of tunneling through the layer. Magnetoresistance measurements show a clear spin-valve signal, with the typical two step switching pattern caused by the magnetocrystalline anisotropy of the epitaxial magnetic electrode.

arXiv comment10 pages 5 figures Paper has been rewritten, new results have been added

References in corpus (6)

• Tunneling Anisotropic Magnetoresistance: A spin-valve like tunnel magnetoresistance using a single magnetic layer
• Large magnetoresistance at room-temperature in semiconducting polymer sandwich devices
• Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
• 1500-fold Tunneling Anisotropic Magnetoresistance in a (Ga,Mn)As stack
• Tunneling anisotropic magnetoresistance in multilayer-(Co/Pt)/AlOx/Pt structures
• Anisotropic magnetoresistance and anisotropic tunneling magnetoresistance due to quantum interference in ferromagnetic metal break junctions

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• Giant anisotropic magnetoresistance through a tilted molecular $\pi$-orbital
• Impact of tunnel barrier strength on magnetoresistance in carbon nanotubes
• Spin transport with traps: dramatic narrowing of the Hanle curve
• Molecular Anisotropic Magnetoresistance
• Quantum dynamics of nuclear spins and spin relaxation in organic semiconductors