Auger recombination rates in nitrides from first principles
arXiv:0904.3559 · doi:10.1063/1.3133359
Abstract
We report Auger recombination rates for wurtzite InGaN calculated from first principles density-functional and many-body-perturbation theory. Two different mechanisms are examined -- inter- and intra-band recombination -- that affect different parts of the emission spectrum. In the blue to green spectral region and at room temperature the Auger coefficient can be as large as 2x10^-30cm^6s^-1; in the infrared even larger. Since Auger recombination scales with the cubic power of the free-carrier concentration it becomes an important non-radiative loss mechanism at high current densities. Our results indicate that Auger recombination may be responsible for the loss of quantum efficiency that affects InGaN-based light emitters.
4 pages including 2 figures
References in corpus (4)
- Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
- Combining GW calculations with exact-exchange density-functional theory: An analysis of valence-band photoemission for compound semiconductors
- Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
- Dielectric anisotropy in the GW space-time method
Cited by in corpus (10)
- First-principles calculations of indirect Auger recombination in nitride semiconductors
- Tunable Terahertz Amplification Based on Photoexcited Active Graphene Hyperbolic Metamaterials
- Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications
- Superluminal plasmons with resonant gain in population inverted bilayer graphene
- Numerical simulation of InGaN Schottky solar cell
- Influences of excitation-dependent bandstructure changes on InGaN light-emitting diode efficiency
- Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode
- Simulation of GaN-Based Light Emitting Diodes Incorporating Composition Fluctuation Effects
- Comment on "Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop" [Phys. Rev. Lett. 110, 177406 (2013)]
- Understanding different efficiency droop behaviors in InGaN-based near-UV, blue and green light-emitting diodes through differential carrier lifetime measurements