Polarization-Engineered InGaN/GaN Heterojunctions for Photovoltaic Applications
arXiv:1709.03729 · doi:10.1109/JPHOTOV.2017.2775164
Abstract
The photovoltaic properties of (0001) n-InGaN/p-GaN single heterojunctions were investigated numerically and compared with those of conventional p-GaN/i-InGaN/n-GaN structures, employing realistic material parameters. This alternative device architecture exploits the large polarization fields, and high efficiency modules are achieved for In-rich, partially relaxed and coherently strained InGaN films. Conversion efficiencies up to 14% under AM1.5G illumination can be reached, revealing the true potential of InGaN single junction solar cells with proper design.
arXiv commentA modified version of this work has been submitted to IEEE Journal of Photovoltaics