Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode
arXiv:1308.1050 · doi:10.1364/OE.22.001413
Abstract
The changes in excitation dependence of efficiency with temperature is modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density arising from screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k.p equations in the envelop approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.
arXiv admin note: text overlap with arXiv:1107.0620