Size of Orbital Ordering Domain Controlled by the Itinerancy of the 3d Electrons in a Manganite Thin Film
arXiv:0903.1687 · doi:10.1103/PhysRevB.79.220403
Abstract
An electronic effect on a macroscopic domain structure is found in a strongly correlated half-doped manganite film NdSrMnO3 grown on a (011) surface of SrTiO3. The sample has a high-temperature (HT) phase free from distortion above 180K and two low-temperature (LT) phases with a large shear-mode strain and a concomitant twin structure. One LT phase has a large itinerancy (A-type), and the other has a small itinerancy (CE-type), while the lattice distortions they cause are almost equal. Our x ray diffraction measurement shows that the domain size of the LT phase made by the HT-CE transition is much smaller than that by the HT-A transition, indicating that the difference in domain size is caused by the electronic states of the LT phases.
9 pages, 4 figures
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