Current-perpendicular-to-plane magnetoresistance of a domain wall confined in a nano-oxide-layer
arXiv:0902.0644 · doi:10.1063/1.3055357
Abstract
We theoretically study the current-perpendicular-to-plane magnetoresistance of a domain wall confined in a current-confined-path (CCP) structure made of a nano-oxide-layer (NOL). In order to calculate the MR ratio of the system, the continuity equations for charge and spin currents are numerically solved with the three-dimensional CCP geometry by use of finite element method. It is confirmed that the MR ratio is enhanced by the CCP structure, which is consistent with the experimental results.
arXiv comment9 pages, 3 figures, 3 authors