Full counting statistics of crossed Andreev reflection
arXiv:0901.3551 · doi:10.1103/PhysRevB.78.224515
Abstract
We calculate the full transport counting statistics in a three-terminal tunnel device with one superconducting source and two normal-metal or ferromagnet drains. We obtain the transport probability distribution from direct Andreev reflection, crossed Andreev reflection, and electron transfer which reveals how these processes' statistics are determined by the device conductances. The cross-correlation noise is a result of competing contributions from crossed Andreev reflection and electron transfer, as well as antibunching due to the Pauli exclusion principle. For spin-active tunnel barriers that spin polarize the electron flow, crossed Andreev reflection and electron transfer statistics exhibit different dependencies on the magnetization configuration, and can be controlled by relative magnetization directions and voltage bias.
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