Pseudospin valve in bilayer graphene: towards graphene-based pseudospintronics
arXiv:0901.0889 · doi:10.1103/PhysRevLett.102.247204
Abstract
We propose a non-magnetic, pseudospin-based version of a spin valve, in which the pseudospin polarization in neighboring regions of a graphene bilayer is controlled by external gates. Numerical calculations demonstrate a large on-off ratio of such a device. This finding holds promise for the realization of pseudospintronics: a form of electronics based upon the manipulation of pseudospin analogous to the control of physical spin in spintronics applications.
Published version, 4 pages, 3 figures
References in corpus (8)
- Electric Field Effect in Atomically Thin Carbon Films
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Valley filter and valley valve in graphene
- Gate-induced insulating state in bilayer graphene devices
- Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
- Pseudospin Magnetism in Graphene
- Boltzmann transport and residual conductivity in bilayer graphene