Ferromagnetism and spin polarized charge carriers in In${}_2$O${}_3$ thin films

Abstract

We present evidence for spin polarized charge carriers in In${}_2$O${}_3$ films. Both In${}_2$O${}_3$ and Cr doped In${}_2$O${}_3$ films exhibit room temperature ferromagnetism after vacuum annealing, with a saturation moment of approximately 0.5 emu/cm${}^3$. We used Point Contact Andreev Reflection measurements to directly determine the spin polarization, which was found to be approximately 50$\pm$5% for both compositions. These results are consistent with suggestions that the ferromagnetism observed in certain oxide semiconductors may be carrier mediated.

5 pages 5 figures

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• Spin polarized transport current in n-type co-doped ZnO thin films measured by Andreev spectroscopy
• Impurity-vacancy complexes and ferromagnetism in doped sesquioxides
• Grain boundary ferromagnetism in vanadium-doped In${}_2$O${}_3$ thin films