Thermodynamics of carrier-mediated magnetism in semiconductors

Abstract

We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing temperature leads to an increased carrier density, such that the enhanced exchange coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised.

4 pages, 3 figures

References in corpus (3)

• Theory of ferromagnetic (III,Mn)V semiconductors
• All-electrical measurement of spin injection in a magnetic $p$-$n$ junction diode
• Re-entrant ferromagnetism in a generic class of diluted magnetic semiconductors

Cited by in corpus (13)

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• Ferromagnetism and spin polarized charge carriers in In${}_2$O${}_3$ thin films
• Theory of Mn-doped I-II-V Semiconductors
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• Simplest model to study reentrance in physical systems
• Jahn-Teller Distortion in Bimetallic Oxalates
• Magnetic anisotropies of quantum dots
• Unconventional ferromagnetism and transport properties of (In,Mn)Sb dilute magnetic semiconductor
• Spin ordering in magnetic quantum dots: From core-halo to Wigner molecules
• The nuclear polaron beyond the mean-field approximation
• Reentrant Formation of Magnetic Polarons in Quantum Dots
• Magnetic ordering in quantum dots: Open vs. closed shells
• A semiquantitative approach to the impurity-band-related transport properties of GaMnAs nanolayers