Binding of a 3He impurity to a screw dislocation in solid 4He

Abstract

Using first-principle simulations for the probability density of finding a 3He atom in the vicinity of the screw dislocation in solid 4He, we determine the binding energy to the dislocation nucleus E_B = 0.8 \pm 0.1 K and the density of localized states at larger distances. The specific heat due to 3He features a peak similar to the one observed in recent experiments, and our model can also account for the observed increase in shear modulus at low temperature. We further discuss the role of 3He in the picture of superfluid defects.

4 pages, 4 figures

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Cited by in corpus (13)

• Critical dislocation speed in helium-4 crystals
• Quantum Plasticity and Supersolid Response in Helium-4
• Supersolid behavior in confined geometry
• Quantum dislocations: the fate of multiple vacancies in two dimensional solid 4He
• Relaxation of superflow in a network: an application to the dislocation model of supersolidity of helium crystals
• Zero-point Divacancy Concentration in the Shadow Wave-Function Model for Solid 4He
• Non-Classical Response from Quench-Cooled Solid Helium Confined in Porous Gold
• Mass Superflux in Solid Helium: the Role of ${}^3$He Impurities
• Interplay of non-linear elasticity and dislocation-induced superfluidity in solid Helium-4
• Nonlinear and Hysteretic Ultrasound Propagation in Solid ${}^4$He: Dynamics of Dislocation Lines and Pinning Impurities
• Study of solid 4He in two dimensions. The issue of zero-point defects and study of confined crystal
• Transverse Quantum Superfluids
• Saga of Superfluid Solids