Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

Abstract

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, $t_{BE}$, and investigated their resistance switching behaviors. The capacitors with $t_{BE}\ge 50$ nm exhibited typical unipolar resistance memory switching, while those with $t_{BE}\le 30$ nm showed threshold switching. This interesting phenomenon can be explained in terms of the temperature-dependent stability of conducting filaments. In particular, the thinner $t_{BE}$ makes dissipation of Joule heat less efficient, so the filaments will be at a higher temperature and become less stable. This study demonstrates the importance of heat dissipation in resistance random access memory.

14 pages, 3 figures

References in corpus (1)

• Nonpolar resistance switching of metal/binary-transition-metal oxides/metal sandwiches: homogeneous/inhomogeneous transition of current distribution

Cited by in corpus (3)

• Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film
• Scaling behaviors of RESET voltages and currents in unipolar resistance switching
• Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films