most citedPercolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

244 citations · 537 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci200889 cited

Scaling behaviors of RESET voltages and currents in unipolar resistance switching

S. B. Lee, S. C. Chae, S. H. Chang +4

Unipolar switching phenomena have attracted a great deal of recent attention, but the wide distributions of switching voltages still pose major obstacles for scientific advancement…

cond-mat.mtrl-sci200825 cited

Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

S. B. Lee, S. C. Chae, S. H. Chang +6

We investigated third harmonic generation in NiO thin films, which exhibit unipolar resistance switching behavior. We found that the low resistance states of the films were strongl…

cond-mat.mtrl-sci2008244 cited

Percolation Model Explaining Both Unipolar Memory and Threshold Resistance Switchings in NiO Film

S. H. Chang, J. S. Lee, S. C. Chae +5

We observed two types of unipolar resistance switching (RS) in NiO film: memory RS at low temperature and threshold RS at high temperature. We explain these phenomena using a bond…

cond-mat.mtrl-sci2008155 cited

Effects of heat dissipation on unipolar resistance switching in Pt/NiO/Pt capacitors

S. H. Chang, S. C. Chae, S. B. Lee +8

We fabricated Pt/NiO/Pt capacitor structures with various bottom electrode thicknesses, , and investigated their resistance switching behaviors. The capacitors with $t_{BE}…

cond-mat.mtrl-sci200624 cited

Epitaxial growth and the magnetic properties of orthorhombic YTiO3 thin films

S. C. Chae, Y. J. Chang, S. S. A. Seo +3

High-quality YTiO3 thin films were grown on LaAlO3 (110) substrates at low oxygen pressures (<10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements…