Spin-orbit coupling in bulk GaAs

Abstract

We study the spin-orbit coupling in the whole Brillouin zone for GaAs using both the $s{p}^3{s}^{\ast }{d}^5$ and $s{p}^3{s}^{\ast }$ nearest-neighbor tight-binding models. In the $\Gamma$-valley, the spin splitting obtained is in good agreement with experimental data. We then further explicitly present the coefficients of the spin splitting in GaAs $L$ and $X$ valleys. These results are important to the realization of spintronic device and the investigation of spin dynamics far away from equilibrium.

8 pages, 3 figures, Physica E, in press

Cited by in corpus (3)

• Spin orbit coupling in bulk ZnO and GaN
• Multi-valley spin relaxation in the presence of high in-plane electric fields in $n$-type GaAs quantum wells
• $L$-valley electron $g$ factor in bulk GaAs and AlAs