Domain Switching Kinetics in Disordered Ferroelectric Thin Films

Abstract

We investigated domain kinetics by measuring the polarization switching behaviors of polycrystalline Pb(Zr,Ti)O${}_3$ films, which are widely used in ferroelectric memory devices. Their switching behaviors at various electric fields and temperatures could be explained by assuming the Lorentzian distribution of domain switching times. We viewed the switching process under an electric field as a motion of the ferroelectric domain through a random medium, and we showed that the local field variation due to dipole defects at domain pinning sites could explain the intriguing distribution.

4 pages and 4 figures

References in corpus (1)

• Creep motion of an elastic string in a random potential

Cited by in corpus (4)

• Nonlinear Dynamics of Domain Wall Propagation in Epitaxial Ferroelectric Thin Films
• Statistical switching kinetics in ferroelectrics
• Four switching categories for thin-film and bulk ferroelectrics
• Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films