Statistical switching kinetics in ferroelectrics

Abstract

By assuming a more realistic nucleation and polarization reversal scenario we build a new statistical switching model for ferroelectrics, which is different from either the Kolmogorov-Avrami-Ishibashi (KAI) model or the Nucleation-Limited-Switching (NLS) model. After incorporating a time-dependent depolarization field this model gives a good description about the retardation behavior in polycrystalline thin films at medium or low fields, which can not be described by the traditional KAI model. This model predicts correctly n=1 for polycrystalline thin films at high Eappl or ceramic bulks in the ideal case.

References in corpus (2)

• Domain Switching Kinetics in Disordered Ferroelectric Thin Films
• Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr_{x}Ti_{1-x})O_{3} thin films

Cited by in corpus (6)

• A model for retention on short, intermediate and long time-scale in ferroelectric thin films
• Bipolar and unipolar electrical fatigue in ferroelectric lead zirconate titanate thin films: an experimental comparison study
• Stochastic multi-step polarization switching in ferroelectrics
• Four switching categories for thin-film and bulk ferroelectrics
• Effect of polarization fatigue on the Rayleigh coefficients of ferroelectric lead zirconate titanate thin films: experimental evidence and implications
• Kinetics of nano-size Ferroelectrics