Kasetsart University

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20072026

most citedCapacity of a Multiple-Antenna Fading Channel with a Quantized Precoding Matrix

165 citations

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Showing 2022 · cond-mat.mtrl-sciShow all

4 papers · 2 filters

cond-mat.mtrl-sci2022★ 10 cited

Theoretically proposed another stable polymorph of two-dimensional penta-PdPSe

Klichchupong Dabsamut, Intuon Chatratin, Thanasee Thanasarnsurapong +2

The theoretical discovery of new and stable 2D penta materials has stimulated the technological advancement due to the anticipated exotic properties of such structure, including th…

cond-mat.mtrl-sci2022★ 1 cited

Calculated electron paramagnetic resonance $g$ -tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Klichchupong Dabsamut, Adisak Boonchun, Walter R. L. Lambrecht

Various defects in ZnO, focused on substitutional N $_{O}$ and N $_{2}$ in various sites, O-site, interstitial and Zn-site are studied using first-principles calculations with the goal o…

cond-mat.mtrl-sci2022★ 11 cited

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I $_{2}$ Doping

Pimpisut Worakajit, Pinit Kidkhunthod, Saran Waiprasoet +4

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the dev…

cond-mat.mtrl-sci2022★ 5 cited

N $_{2}$ , NO and O $_{2}$ molecules in LiGaO $_{2}$ in both Ga and Li sites and their relation to the vacancies

Klichchupong Dabsamut, Adisak Boonchun, Walter Lambrecht

Doping of the ultrawide band gap semicodnctor LiGaO $_{2}$ ( $E_{g} = 5.6$ eV) with N $_{2}$ , NO and O $_{2}$ molecules placed in either Ga or Li-vacancies is studied using first-principles calc…

Theoretically proposed another stable polymorph of two-dimensional penta-PdPSe

Calculated electron paramagnetic resonance g-tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I2​ Doping

N2​, NO and O2​ molecules in LiGaO2​ in both Ga and Li sites and their relation to the vacancies

Calculated electron paramagnetic resonance $g$ -tensor and hyperfine parameters for zinc vacancy and N related defects in ZnO

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate (CuSCN) and Defect-Healing by I $_{2}$ Doping

N $_{2}$ , NO and O $_{2}$ molecules in LiGaO $_{2}$ in both Ga and Li sites and their relation to the vacancies